Oxygen precipitation in Czochralski grown silicon heat treated at 525 degrees C

Cheung, J. Y., Stewart, R. J. and May, R. P. (2006) Oxygen precipitation in Czochralski grown silicon heat treated at 525 degrees C. Semiconductor Science and Technology, 21 (3). pp. 236-243. ISSN 0268-1242

Abstract/Summary

The diffusion of interstitial oxygen In silicon at 525 degrees C is studied using time-of-flight small-angle neutron scattering (SANS) to separate the elastic scattering from oxygen-containing aggregates from the inelastic scattering from neutron-phonon interactions. The growth of oxygen-containing aggregates as a function of time gives a diffusion coefficient, D, calculated from Ham's theory, that is I factor of similar to 3.8 +/- 1.4 times higher than that expected by extrapolation of higher and lower temperature data (D = 0.13 exp(-2.53 eV kT(-1)) cm(2) s(-1)). This result confirms previous observations of enhanced diffusion at intermediate temperatures (400 degrees C-650 degrees C) although the magnitude of the enhancement we find is Much smaller than that reported by some others.