Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

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Luu, S. D. N. and Vaqueiro, P. orcid id iconORCID: https://orcid.org/0000-0001-7545-6262 (2013) Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn). Semiconductor Science and Technology, 29 (6). 064002. ISSN 0268-1242 doi: 10.1088/0268-1242/29/6/064002

Abstract/Summary

Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

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Item Type Article
URI https://reading-clone.eprints-hosting.org/id/eprint/36420
Identification Number/DOI 10.1088/0268-1242/29/6/064002
Refereed Yes
Divisions Life Sciences > School of Chemistry, Food and Pharmacy > Department of Chemistry
Publisher IOP
Publisher Statement Authors who do not select the gold open access option can post the accepted version of their manuscript to an institutional or subject repository after a 12 month embargo (with reuse restrictions). The accepted version of a paper refers to an author's original version of an article after any changes made during peer review but before any editing, typesetting, etc by the publisher
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